? 2015 ixys corporation, all rights reserved xpt tm 650v igbt genx3 tm IXYH120N65B3 v ces = 650v i c110 = 120a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 1.90v t fi(typ) = 107ns symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 340 a i lrms terminal current limit 160 a i c110 t c = 110c 120 a i cm t c = 25c, 1ms 760 a i a t c = 25c 60 a e as t c = 25c 1 j ssoa v ge = 15v, t vj = 150c, r g = 2 ? i cm = 240 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 400v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 1360 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g ds100662(4/15) extreme light punch through igbt for 10-30khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 1 ma i ges v ce = 0v, v ge = ? 20v ??????????????? 100 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.55 1.90 v t j = 150 ? c 1.77 v features ? optimized for 10-30khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? high current handling capability ? international standard package advantages ? high power density ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts g = gate c = collector e = emitter tab = collector to-247 g c e tab advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYH120N65B3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 35 58 s c ie s 6900 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 393 pf c res 146 pf q g(on) 250 nc q ge i c = 120a, v ge = 15v, v ce = 0.5 ? v ces 52 nc q gc 110 nc t d(on) 30 ns t ri 28 ns e on 1.34 mj t d(off) 168 ns t fi 107 ns e of f 1.50 mj t d(on) 30 ns t ri 30 ns e on 2.60 mj t d(off) 226 ns t fi 196 ns e off 2.20 mj r thjc 0.11 c/w r thcs 0.21 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 50a, v ge = 15v v ce = 400v, r g = 2 ? note 2 inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 400v, r g = 2 ? note 2 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. 1 - gate 2,4 - collector 3 - emitter to-247 (ixyh) outline 3 d s a l d r e e1 l1 d1 d2 a2 q c b a 0p 0k m d b m b4 0p1 1 2 4 b c e ixys option r1 r1 r1 r1 j m c a m b2 a1
? 2015 ixys corporation, all rights reserved IXYH120N65B3 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 00.511.522.533.5 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 9v 7v 8v 11v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 v ce - volts i c - amperes v ge = 15v 10v 11v 8v 9v 7v 12v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 00.511.522.533.54 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 8v 9v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 60a i c = 240a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 240a t j = 25oc 120a 60a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 45678910 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH120N65B3 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum trasient thermal impedance aaa 0.2 fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms v ce(sat) limi t 100s 10ms 100ms fig. 7. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 200 220 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 q g - nanocoulombs v ge - volts v ce = 325v i c = 120a i g = 10ma fig. 9. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res
? 2015 ixys corporation, all rights reserved IXYH120N65B3 fig. 13. inductive switching energy loss vs. gate resistance 1 2 3 4 5 6 2 4 6 8 10 12 14 r g - ohms e off - millijoules 0 2 4 6 8 10 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 130 150 170 190 210 230 2 4 6 8 10 12 14 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 17. inductive turn-off switching times vs. collector current 60 80 100 120 140 160 180 200 220 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanosecond s 120 140 160 180 200 220 240 260 280 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 18. inductive turn-off switching times vs. junction temperature 90 110 130 150 170 190 210 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 120 140 160 180 200 220 240 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH120N65B3 ixys ref: ixy_120n65b3(8d-y42) 4-23-15 fig. 20. inductive turn-on switching times vs. collector current 20 30 40 50 60 70 80 90 100 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanosecond s 28 29 30 31 32 33 34 35 36 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 26 28 30 32 34 36 38 40 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 2468101214 r g - ohms t r i - nanosecond s 10 20 30 40 50 60 70 80 90 100 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 50a i c = 100a
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